TCAD simulation is a challenge not because the equations and models are so complicated, but because each simulation result is immediately compared to experiments and used in manufacturing.

TCAD device simulation tools have a good modeling base, but the physical reality is so complex that the degree of simplification is still very high. This is why calibration is so important.

With the resources on this member site, we would like to support the calibration of TCAD device simulation in particular. For a good calibration, reliable material parameters, adapted models and efficient calibration methods are of utmost importance.

On this membership site, most information is behind a paywall and can be accessed for an annual fee (see below).

You want more Resources? Become a member!

With a membership you get regularily updated new content

Only for our members
Currently the following information and services are only available for our members:

Models and parameters for the band gap of AlGaN, Ga2O3, Diamond, InGaN, InAlN, SiGe, and SiC

Models and parameters for the affinity of AlGaN, Ga2O3, Diamond, InGaN, SiGe, and SiC
Presentations for SiC and AlGaN device simulation methodology

Limited eMail-consulting

Resources Membership - Annually
100CHF
Every year
TCAD and device simulation resources
- full access to all information and updates